Method of producing ferroelectric capacitor

Details Method of producing ferroelectric capacitor Method of producing ferroelectric capacitor

2006-08-22

2006-08-22

Baumeister, B. William (Department: 2891)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S238000, C438S239000, C438S240000, C438S381000, C257SE21664

Reexamination Certificate

active

07094611

ABSTRACT:
A method of producing a ferroelectric capacitor includes preparing a semiconductor substrate having MOSFETs with an impurity diffused area in a memory cell area and a peripheral circuit area; forming a first interlayer insulating film on the semiconductor substrate; forming a conductive plug in the first interlayer insulating film to be electrically connected to the impurity diffused area; forming a second interlayer insulating film on the first interlayer insulating film; removing a portion of the second interlayer insulating film in the memory cell area to expose the first interlayer insulating film and the conductive plug; laminating a first conductive layer, a ferroelectric layer, and a second conductive layer sequentially on the first interlayer insulating film and the second interlayer insulating film to form a capacitor forming laminated film; forming an etching mask on the capacitor forming laminated film; and etching the capacitor forming laminated film to form a ferroelectric capacitor.

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