Stacked photovoltaic device

Details Stacked photovoltaic device Stacked photovoltaic device

2006-06-20

2006-06-20

Diamond, Alan (Department: 1753)

Batteries: thermoelectric and photoelectric

Photoelectric

Panel or array

C136S258000, C136S255000, C136S261000, C257S458000, C257S464000, C257S461000

Reexamination Certificate

active

07064263

ABSTRACT:
A stacked photovoltaic device comprises at least three p-i-n junction constituent devices superposed in layers, each having a p-type layer, an i-type layer and an n-type layer which are formed of silicon non-single crystal semiconductors. An amorphous silicon layer is used as the i-type layer of a first p-i-n junction, a microcrystalline silicon layer is used as the i-type layer of a second p-i-n junction and a microcrystalline silicon layer is used as the i-type layer of a third p-i-n junction, the first to third layers being in order from the light incident side. In this way, a stacked photovoltaic device can be provided which is practical and low-cost and yet has high reliability and high photoelectric conversion efficiency.

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