Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Heterojunction
Reexamination Certificate
2006-08-29
2006-08-29
Soward, Ida M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Heterojunction
C257S009000, C257S015000, C257S016000, C257S017000, C257S018000, C257S019000, C257S020000, C257S021000, C257S022000, C257S023000, C257S024000, C257S025000, C438S172000, C438S761000
Reexamination Certificate
active
07098471
ABSTRACT:
Semiconductor quantum well devices and methods of making the same are described. In one aspect, a device includes a quantum well structure that includes semiconductor layers defining interleaved heavy-hole and light-hole valance band quantum wells. Each of the quantum wells includes a quantum well layer interposed between barrier layers. One of the semiconductor layers that functions as a barrier layer of one of the light-hole quantum wells also functions as the quantum well layer of one of the heavy-hole quantum wells. Another of the semiconductor layers that functions as a barrier layer of one of the heavy-hole quantum wells also functions as the quantum well layer of one of the light-hole quantum wells.
REFERENCES:
patent: 5081634 (1992-01-01), Weisbuch et al.
patent: 5090790 (1992-02-01), Zucker
patent: 5412225 (1995-05-01), Dutta et al.
patent: 5625635 (1997-04-01), Kurtz et al.
patent: 5747827 (1998-05-01), Duggan et al.
patent: 5757023 (1998-05-01), Koteles et al.
patent: 5848085 (1998-12-01), Nitta
patent: 6075254 (2000-06-01), Shen et al.
patent: 6437361 (2002-08-01), Matsuda
patent: 6476596 (2002-11-01), Wraback et al.
patent: 6526075 (2003-02-01), Mizutani
patent: 6574027 (2003-06-01), Miyazaki
patent: 2003/0057415 (2003-03-01), Komori
patent: 2003/0235224 (2003-12-01), Ohlander
patent: 2004/0124409 (2004-07-01), Ebe et al.
patent: 2004/0149981 (2004-08-01), Reynolds
patent: 2004/0240025 (2004-12-01), Bour et al.
patent: 2006/0025835 (2006-02-01), Calcott
Ranganath Tirumala R.
Zhu Jintian
Avago Technologies Fiber (IP) Singapore Pte. Ltd.
Soward Ida M.
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