Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2006-06-13
2006-06-13
Andujar, Leonardo (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
Reexamination Certificate
active
07061114
ABSTRACT:
An integrated circuit having copper interconnecting metallization (311, 312) protected by a first, inorganic overcoat layer (320), portions of the metallization exposed in windows (301, 302) opened through the thickness of the first overcoat layer. A patterned conductive barrier layer (330) is positioned on the exposed portion of the copper metallization and on portions of the first overcoat layer surrounding the window. A bondable metal layer (350, 351) is positioned on the barrier layer; the thickness of this bondable layer is suitable for wire bonding. A second, organic overcoat layer (360) is surrounding the window so that the surface (360a) of this second overcoat layer at the edge of the window is at or above the surface (350a) of the bondable layer. The second overcoat layer may be spaced (370) from the edge of the bondable metal layer.
REFERENCES:
patent: 5734200 (1998-03-01), Hsue et al.
patent: 6251694 (2001-06-01), Liu et al.
patent: 6737745 (2004-05-01), Sabin et al.
patent: 2003/0030153 (2003-02-01), Perry
Hortaleza Edgardo R.
Li Lei
Andujar Leonardo
Brady III Wade James
Tung Yingsheng
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