Method of forming and using a hardmask for forming...

Details Method of forming and using a hardmask for forming... Method of forming and using a hardmask for forming...

2006-02-21

2006-02-21

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

C438S253000, C438S003000, C257S295000, C257S296000

Reexamination Certificate

active

07001821

ABSTRACT:
Hardmasks and fabrication methods are presented for producing ferroelectric capacitors in a semiconductor device, wherein a hardmask comprising aluminum oxide or strontium tantalum oxide is formed above an upper capacitor electrode material, and capacitor electrode and ferroelectric layers are etched to define a ferroelectric capacitor stack.

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