Coherent light generators – Particular active media – Semiconductor
Reexamination Certificate
2006-11-21
2006-11-21
Menefee, James (Department: 2828)
Coherent light generators
Particular active media
Semiconductor
Reexamination Certificate
active
07139298
ABSTRACT:
The present invention aims to provide a semiconductor laser device which has a structure that is easy to manufacture, a satisfactory temperature characteristic as well as high-speed response characteristic. The device includes the following: an n-type GaAs substrate101; an n-type AlGaInP cladding layer102formed on the n-type GaAs substrate101; a non-doped quantum well active layer103; a p-type AlGaInP first cladding layer104; a p-type GaInP etching stop layer105; a p-type AlGaInP second cladding layer106; a p-type GaInP cap layer107; a p-type GaAs contact layer108; and an n-type AlInP block layer109. The device has a ridge portion and convex portions formed on both sides of the ridge portion, and the p-type GaAs contact layer108is formed on the ridge portion only.
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Adachi Hideto
Kashima Takayuki
Makita Kouji
Yoshikawa Kenji
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