Flash memory

Details Flash memory Flash memory

2006-05-16

2006-05-16

Nguyen, Viet Q. (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185330, C365S185310, C365S185180, C365S185240, C365S218000

Reexamination Certificate

active

07046557

ABSTRACT:
Flash memory devices having control circuitry to decrease the magnitude of a source voltage of a first polarity during an erase period to increase the magnitude of a control gate voltage of a second polarity applied during the erase period.

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Lee et al., “Using Erase Self-Detrapped Effect To Eliminate the FLash Cell Program/Erase Cycling VthWindow Close,” IEEE, 1999.

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