Pressure sensor

Measuring and testing – Fluid pressure gauge – Diaphragm

Reexamination Certificate

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Reexamination Certificate

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06997058

ABSTRACT:
A pressure sensor includes a metal stem having a diaphragm, and a semiconductor substrate in which an insulation layer is inserted between first and second semiconductor layers. A plurality of strain gauges are formed on a predetermined area of the first semiconductor layer of the semiconductor substrate, for converting a bending of the diaphragm to an electrical signal. In the pressure sensor, the strain gauges have pattern shapes insulated and separated from each other by trenches extending from a surface of the first semiconductor layer to the insulation layer. Furthermore, the second semiconductor layer has a recess portion, which is recessed from a surface of the second semiconductor layer to the insulation layer and is provided at a position corresponding to the predetermined area. The diaphragm is inserted into the recess portion, and the insulation layer is attached to a surface of the diaphragm in the recess portion.

REFERENCES:
patent: 4332000 (1982-05-01), Petersen
patent: 4840067 (1989-06-01), Nishida et al.
patent: 4986861 (1991-01-01), Nishida et al.
patent: 5583295 (1996-12-01), Nagase et al.
patent: 0 913 678 (1999-05-01), None
patent: A-07-162019 (1995-06-01), None

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