Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With particular semiconductor material
Reexamination Certificate
2006-11-14
2006-11-14
Lee, Eugene (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With particular semiconductor material
C257S094000, C257S096000, C257S101000, C257S102000, C257S190000
Reexamination Certificate
active
07135716
ABSTRACT:
A gallium nitride-based semiconductor light-emitting device includes a sapphire substrate having a nitridated upper surface; a polarity conversion layer formed on the sapphire substrate and made of MgN-based single ciystals; a first conductive gallium nitride-based semiconductor layer formed on the polarity conversion layer; an active layer formed on the first conductive gallium nitride-based semiconductor layer; and a second conductive gallium nitride-based semiconductor layer formed on the active layer.
REFERENCES:
patent: 5633192 (1997-05-01), Moustakas et al.
patent: 5793061 (1998-08-01), Ohuchi et al.
patent: 6005258 (1999-12-01), Manabe et al.
patent: 6147364 (2000-11-01), Itaya et al.
patent: 6462357 (2002-10-01), Tsai et al.
patent: 6593016 (2003-07-01), Chiyo et al.
patent: 6610144 (2003-08-01), Mishra et al.
patent: 6657300 (2003-12-01), Goetz et al.
patent: 6855959 (2005-02-01), Yamaguchi et al.
patent: 2002/0163008 (2002-11-01), Northrup et al.
patent: 2004/0079947 (2004-04-01), Lan et al.
patent: 2004/0137657 (2004-07-01), Dmitriev et al.
patent: 2005/0017261 (2005-01-01), Ishizaki
“Control of the polarity of GaN films using an Mg adsorption layer”, Journal of Crystal Growth vol. 251 460-464 (Apr. 2003).
“Polarity control in MBE growth of III-nitrides, and its device application”, Current Applied Physics vol. 2 305-310 (Aug. 2002).
Kim Dong Joon
Kim Je Won
Kim Sun Woon
Lee Soo Min
Oh Jeong Tak
Lee Eugene
Lowe Hauptman & Berner LLP.
Samsung Electro-Mechanics Co. Ltd.
LandOfFree
Gallium nitride-based semiconductor light-emitting device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Gallium nitride-based semiconductor light-emitting device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Gallium nitride-based semiconductor light-emitting device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3635133