Magnetic sensor based on efficient spin injection into...

Details Magnetic sensor based on efficient spin injection into... Magnetic sensor based on efficient spin injection into...

2006-08-08

2006-08-08

Dickey, Thomas L. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Magnetic field

C257S295000, C257S075000, C365S158000, C365S175000

Reexamination Certificate

active

07087971

ABSTRACT:
A magnetic sensor based on efficient spin injection of spin-polarized electrons from ferromagnets into semiconductors and rotation of electron spin under a magnetic field. Previous spin injection structures suffered from very low efficiency (less than 5). A spin injection device with a semiconductor layer sandwiched between δ-doped layers and ferromagnets allows for very high efficient (close to 100%) spin polarization to be achieved at room temperature, and allows for high magneto-sensitivity and very high operating speed, which in turn allows devising ultra fast and sensitive magnetic sensors.

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Albrecht et al., cond-mat/0110059, (Feb. 7, 2002) (a publication of ArXiv.org, available at http://arXiv.org/PS—cache/cond-mat/pdf/0202/0202131.pdf. Note that ArXiv.org is owned, operated and funded by Cornell University).
Wolf et al., “Spintronics: a Spin Based Electronics Vision for the Future,” Science, vol. 294, pp. 1488-1495.
Albrecht, J.D. et al, “Electron Spin Injection at a Schottky Contact” cond-mat/0110059,(a publication of ArXiv.org, available at http://arHiv.org/PS—cache/cond-mat/pdf/0202/0202131.pdf.arHiv.org is owned, operated and funded by Cornell University) (Feb. 7, 2002).
Zhu, H.J. et al., “Room Temperature Spin Injection from Fe into GaAs” Phys. Rev. Lett. vol. 87, No. 1, pp. 016601-1 to 016601-4 (Jul. 2, 2001).

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