Method of producing an end surface light emission type semicondu

Details Method of producing an end surface light emission type semicondu Method of producing an end surface light emission type semicondu

1987-12-09

1988-11-29

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437226, 437906, 437229, H01L 21306

Patent

active

047881615

ABSTRACT:
A method of producing an end surface light emmision type semiconductor device comprising: a process of producing a lower cladding layer, an active layer, and an upper cladding layer on a semiconductor substrate; a process of forming a stripe groove of a predetermined depth reaching the lower cladding layer at a predetermined position of the wafer to produce an output end surface; a process of depositing photosensitive material in the groove; a process of producing a required number of lenses from the photosensitive material; and a process of dividing the wafer into a plurality of lens-appended end surface light emission type semiconductor devices.

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patent: 3981023 (1976-09-01), King et al.
patent: 4339689 (1982-07-01), Yamanaka et al.
patent: 4501637 (1985-02-01), Mitchell et al.
patent: 4740259 (1988-04-01), Heinen
"Reliable High Power Edge Emitting LEDs for 1.3 .mu.m 140 Mb/s Multi-Mode Communication Systems", IOOC '83, 29B2-4.

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