Semiconductor device

Details Semiconductor device Semiconductor device

2006-08-22

2006-08-22

Smith, Zandra V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

C257S040000, C257SE29117

Reexamination Certificate

active

07095046

ABSTRACT:
Provided is a method of realizing a semiconductor device having a structure in which a sufficient light shielding property is compatible with a sufficient storage capacitance without reducing an aperture ratio. A lower light shielding film is formed on a substrate, a TFT is formed on the lower light shielding film, and an upper light shielding film is formed on the TFT via an interlayer insulating film to cover and fit the TFT. Thus, the TFT can be completely light-shielded by the lower light shielding film and the upper light shielding film and an occurrence of a photo leak current can be prevented.

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