Polysilicon etching method

Details Polysilicon etching method Polysilicon etching method

2006-02-07

2006-02-07

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S710000, C438S719000

Reexamination Certificate

active

06995093

ABSTRACT:
A polysilicon etching method capable of completely removing polysilicon residues left on the side walls of a protrusion covered with a polysilicon layer after the polysilicon layer is patterned while form anisotropy of the polysilicon layer is retained and the underlying insulating film is left unetched. After a polysilicon layer is deposited over one principal surface of a substrate, covering a protrusion, a resist layer is formed on the polysilicon layer over the protrusion. By using the resist layer as a mask, a plasma etching process is performed to pattern the polysilicon layer and form a gate electrode polysilicon layer. At a first step, the polysilicon layer is etched by using HBr and Cl2until polysilicon spacer residues appear on the side walls of the protrusion, and at a second step the polysilicon residues are removed by using HBr at a pressure of 5 to 10 mTorr.

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Copy of Korean Office Action dated May 31, 2005 (and English translation of same).

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