Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2006-06-06
2006-06-06
Cao, Phat X. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S059000, C257S072000
Reexamination Certificate
active
07057207
ABSTRACT:
A repairing method of thin film transistor array is provided. The repairing method of thin film transistor array can remove a residue between pixel electrodes so as to prevent the residue from electrically connecting pixel electrodes adjacent to each other. The repairing method of thin film transistor array can also be provided to remove a portion of the pixel electrodes above a particle or a defect, which may cause leakage of a storage capacity. The parameters of repairing method of the thin film transistor array precisely controlled and the yield of the thin film transistor array can be effectively improved.
REFERENCES:
patent: 5298891 (1994-03-01), Plus et al.
patent: 6191832 (2001-02-01), Nakakura
Au Optronics Corporation
Cao Phat X.
Doan Theresa T.
Jianq Chyun IP Office
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