Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2006-08-01
2006-08-01
Tran, Michael (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185240
Reexamination Certificate
active
07085165
ABSTRACT:
A memory cell with a charge-trapping structure stores multiple bits. A biasing arrangement is applied to one part of the charge-trapping structure of the memory cell to store a high threshold state, and a biasing arrangement is applied to another part of the charge-trapping structure tending to raise its threshold voltage without exceeding a maximum threshold voltage of the low threshold state, reducing the read disturb effect between different parts of the memory cell. In another charge-trapping memory cell, when a biasing arrangement is applied to the memory cell to store a higher threshold state, the biasing arrangement tends to cause different parts of the charge-trapping structure of the memory cell to store a higher threshold state, and when a biasing arrangement is applied to the memory cell to store a lower threshold state, the biasing arrangement tends to cause different parts of the charge-trapping structure of the memory cell to store a lower threshold state. In yet another charge-trapping memory cell, a biasing arrangement is applied tending to cause multiple bits of the charge-trapping structure to store a low threshold state, and then a biasing arrangement is applied tending to raise threshold voltages of parts of the charge-trapping structure corresponding to the memory cell without exceeding a maximum threshold voltage of the low threshold state. The read disturb effect between the different parts of the memory cell is thereby reduced.
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Haynes Beffel & Wolfeld LLP
Macronix International Co. Ltd.
Suzue Kenta
Tran Michael
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