Porous film, composition and manufacturing method,...

Details Porous film, composition and manufacturing method,... Porous film, composition and manufacturing method,...

2006-08-01

2006-08-01

Wilson, Christian D. (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S759000, C257S410000, C257S506000, C257S701000

Reexamination Certificate

active

07084505

ABSTRACT:
A porous film-forming composition comprising (A) a curable silicone resin having a Mn of at least 100, (B) a micelle-forming surfactant, and (C) a compound which generates an acid upon pyrolysis remains stable during storage. The composition is coated and heat treated to form a porous film which has flatness, uniformity, a low dielectric constant and a high mechanical strength so that it is best suited as an interlayer dielectric film in the fabrication of semiconductor devices.

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patent: 2000-44875 (2000-02-01), None

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