High-efficiency light emitting diode

Details High-efficiency light emitting diode High-efficiency light emitting diode

2006-08-22

2006-08-22

Soward, Ida M. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S079000, C257S080000, C257S081000, C257S086000, C257S091000, C257S094000, C257S096000, C257S097000, C257S099000, C257S103000, C257S918000

Reexamination Certificate

active

07095041

ABSTRACT:
A high-efficiency light emitting diode is provided. The light emitting diode includes a substrate; a first compound semiconductor layer formed on the top surface of the substrate; a first electrode formed on a region of the first compound semiconductor layer; an active layer formed on a region of the first compound semiconductor layer excluding the region with the first electrode layer, in which 430-nm or less wavelength light is generated; a second compound semiconductor layer formed on the active layer; and a second electrode formed on the second compound semiconductor layer, with a filling ratio of 20–80% with respect to the area of the top surface of the substrate. The light emission of a 430-nm or less light emitting diode can be enhanced by adjusting the size of the p-type second electrode within the range of 20–80%.

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