Proximity correcting lithography mask blanks

Details Proximity correcting lithography mask blanks Proximity correcting lithography mask blanks

2006-02-14

2006-02-14

Mohamedulla, Saleha R. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

C430S030000, C430S330000

Reexamination Certificate

active

06998203

ABSTRACT:
An extreme ultraviolet lithography mask may be heated locally to change its reflectivity and to adjust for proximity and other optical disturbances. The localized heating may result in the formation of silicide at the molybdenum silicon interface in the multilayer stack that makes up the extreme ultraviolet lithography mask.

REFERENCES:
patent: 5503950 (1996-04-01), Miyake et al.
patent: 6756158 (2004-06-01), Yan

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