Electrochemically polishing conductive films on...

Details Electrochemically polishing conductive films on... Electrochemically polishing conductive films on...

2006-05-30

2006-05-30

Clark, S. V. (Department: 2823)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S959000

Reexamination Certificate

active

07052996

ABSTRACT:
An electropolish process may remove a conductive film from a semiconductor wafer. An electropolish apparatus having a pad over a platen may make surface-to-surface electrical contact with the conductive film of the wafer across the entire surface of the pad and the conductive film on the wafer. An electric field may be applied through openings in the pad and electrodes which receive potential by feedthroughs that extend through the platen to those electrodes. The electrodes in the feedthroughs may be electrically isolated from the pad and the platen. As a result, more uniform application of electrical potential across the surface to be polished may be achieved in some embodiments.

REFERENCES:
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patent: 5575706 (1996-11-01), Tsai et al.
patent: 5899745 (1999-05-01), Kim et al.
patent: 6709981 (2004-03-01), Grabbe et al.
patent: 6802955 (2004-10-01), Emesh et al.

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