Insulated gate bipolar transistor having a reduced tail...

Details Insulated gate bipolar transistor having a reduced tail... Insulated gate bipolar transistor having a reduced tail...

2006-06-27

2006-06-27

Flynn, Nathan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

C257SE27055

Reexamination Certificate

active

07067900

ABSTRACT:
An IGBT has an N-type buffer region between a P-type collector region and a P-type base region. The buffer region includes arsenic as a N-type impurity. The buffer region is formed to have a relatively high impurity concentration of equal to or greater than 5×1017 cm-3 and a relatively small thickness of 2 to 10 μm.

REFERENCES:
patent: 5436176 (1995-07-01), Shimizu et al.
patent: 6204097 (2001-03-01), Shen et al.
patent: 05-055583 (1993-03-01), None

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