Semiconductor device manufacturing: process – Having magnetic or ferroelectric component
Reexamination Certificate
2006-08-01
2006-08-01
Baumeister, B. William (Department: 2891)
Semiconductor device manufacturing: process
Having magnetic or ferroelectric component
C257SE21665
Reexamination Certificate
active
07083990
ABSTRACT:
A method of fabricating an MRAM cell including providing a workpiece having at least one magnetic tunnel junction (MTJ) formed thereon, forming an insulating layer made of non-conductive, isolating material over the at least one MTJ, using a damascene process to form at least two adjacent first trenches in the insulating layer, filling the first trenches in the insulating material with a conductive material and polishing the conductive material to form conductive lines, etching of at least a second trench in the insulating layer in between the conductive lines, depositing a ferromagnetic liner material at least over the conductive lines and the second trench; and removing of the ferromagnetic liner material from the bottom surface of said second trench to form ferromagnetic liners of the conductive lines. The second trench has side walls and a bottom surface at a specified aspect ratio.
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Anya Igwe U.
Baumeister B. William
Edell Shapiro & Finnan LLC
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