Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Bipolar transistor
Reexamination Certificate
2006-05-02
2006-05-02
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Bipolar transistor
C257S198000, C257S191000
Reexamination Certificate
active
07038254
ABSTRACT:
This invention provides a double hetero-junction bipolar transistor (DHBT) in which a probability of the impact ionization at the interface between the base and the collector is reduced, thereby enhancing the break down voltage. In the present DHBT, a plurality of transition layers is inserted between the base layer and the collector layer. Each transition layers has an energy band gap gradually increasing from the base to the collector, and comprises a doped layer close to the base and an un-doped layer. Transition layers thus configured may bring both characteristics of the high break down voltage by the reduction of the average doping concentration and the capability of the high-speed operation by the reduction of the junction capacitance.
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Flynn Nathan J.
Sefer Ahmed N.
Smith , Gambrell & Russell, LLP
Sumitomo Electric Industries Ltd.
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