Method for semiconductor wafer planarization by isolation...

Details Method for semiconductor wafer planarization by isolation... Method for semiconductor wafer planarization by isolation...

2006-05-30

2006-05-30

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S690000, C438S692000, C438S959000

Reexamination Certificate

active

07052969

ABSTRACT:
A method of manufacturing a planarized semiconductor wafer in which a semiconductor wafer is provided with a chemical-mechanical polishing stop layer deposited thereon. A photoresist layer is processed and used to form a patterned chemical-mechanical polishing stop layer and shallow trenches. A shallow trench isolation material is then grown on the chemical-mechanical polishing stop layer and in the shallow trenches, and is chemical-mechanical polished to the chemical-mechanical polishing stop layer.

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