Inverted layer epitaxial liftoff process

Details Inverted layer epitaxial liftoff process Inverted layer epitaxial liftoff process

1997-09-16

2000-03-07

Nguyen, Nam

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

438750, 438751, 438458, 438493, 438494, 438498, 438502, 438504, 438509, H01L 2100

Patent

active

060339950

ABSTRACT:
The invention relates to a method for integrating semiconductor device epilayers with arbitrary host substrates, where an indium gallium arsenide etch-stop layer (34) is deposited on an indium phosphide growth substrate (32) and device epilayers (36, 38) are grown on the etch-stop layer in inverse order from their final orientation. The device epilayers are then joined to an aluminum nitride host substrate (42) by inverting the growth substrate and device epilayers. The epilayers are bonded to the host substrate using mono-molecular layer forming bonding material and the growth substrate is selectively etched away from the device epilayers. As a result of the inverse epilayer growth, the epilayers are not removed from the growth substrate prior to bonding to the host substrate, thus protecting the device epilayers and reducing processing steps. Additionally, by mono-molecular bonding, sturdy semiconductor devices are formed with low thermal impedance.

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