Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Patent
1997-08-19
2000-03-07
Powell, William
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
438710, 438742, 216 67, 216 75, 216 77, 156345, 257499, H01L 2100
Patent
active
060339926
ABSTRACT:
A process for plasma etching metal films comprising the steps of forming a noble gas plasma, then transporting the noble gas plasma to a mixing chamber. An organohalide is added to the noble gas plasma in the mixing chamber. The organohalide is selected to have a vapor pressure allowing the formation of activated complexes to etch the metal films and form organometallic compounds as the etch byproducts. The activated complexes thus formed are transported downstream to an etching chamber. In the etching chamber the selected substrate is exposed to the activated complexes, causing the substrate to be etched and organometallic compounds to be formed as byproducts from the reaction of the activated complexes and etching of the substrate. The organometallic byproducts can then be removed from the etch chamber.
REFERENCES:
patent: 4557796 (1985-12-01), Druschke et al.
patent: 5079178 (1992-01-01), Chouan et al.
patent: 5173327 (1992-12-01), Sandhu et al.
patent: 5382550 (1995-01-01), Iyer
patent: 5405491 (1995-04-01), Shahvandi et al.
patent: 5849207 (1998-12-01), Sato
Micro)n Technology, Inc.
Powell William
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