Semiconductor laser device and method of fabricating the same

Details Semiconductor laser device and method of fabricating the same Semiconductor laser device and method of fabricating the same

2006-10-10

2006-10-10

Rodriguez, Armando (Department: 2828)

Coherent light generators

Particular active media

Semiconductor

C372S045013, C257S103000, C257S190000, C438S046000, C438S479000

Reexamination Certificate

active

07120181

ABSTRACT:
In a semiconductor laser device, an AlGaN buffer layer, a GaN layer, an n-GaN layer, an n-AlGaN cladding layer, an MQW light emitting layer, a p-AlGaN cladding layer, a p-first GaN cap layer, a current blocking layer composed of n-AlGaN, and a p-second GaN cap layer are stacked in this order on a sapphire substrate, and a ridge portion having an upper surface having a width W1is formed by etching. The current blocking layer has an opening having a width W2on the upper surface of the ridge portion. The width W2of the opening is smaller than the width W1of the upper surface of the ridge portion. Accordingly, in a light emitting region of the MQW light emitting layer, a saturable light absorbing region is formed on both sides of a current injection region.

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