Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal
Reexamination Certificate
2006-11-28
2006-11-28
Mulpuri, Savitri (Department: 2812)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
C438S046000
Reexamination Certificate
active
07141441
ABSTRACT:
There is provided a surface emitting semiconductor laser satisfying a requirement of making a transverse mode stable and having characteristics of high output power, low resistance, high efficiency, and high speed response and a method for manufacturing the surface emitting semiconductor laser.Five holes are formed on the top surface of an upper multilayer reflection film formed in the shape of a post by the use of a focused ion beam (FIB) processing unit. One hole is formed on the surface of an upper multilayer reflection film corresponding to the center position of a square current injection region which is about 8 μm square and the remaining four holes are formed at the corners of the square current injection region, for example, at the positions about 2 μm square away from the one hole to produce four light emitting spots.
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Koyama Fumio
Ueki Nobuaki
Fuji 'Xerox Co., Ltd.
Fumio Koyama c/o Tokyo Institute of Technology
Mulpuri Savitri
Oliff & Berridg,e PLC
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