Semiconductor device suited for a high frequency amplifier

Details Semiconductor device suited for a high frequency amplifier Semiconductor device suited for a high frequency amplifier

2006-05-02

2006-05-02

Soward, Ida M. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

C257S189000, C257S191000, C257S196000, C257S197000, C257S198000, C257S200000, C257S201000, C257S615000

Reexamination Certificate

active

07038250

ABSTRACT:
According to the present invention, there is a provided a semiconductor device having, a collector contact layer made of an n-type GaAs layer; a first collector layer formed on the collector contact layer and made of an n-type GaAs layer; a second collector layer formed on the first collector layer and made of a p-type GaAs layer; a third collector layer formed on the second collector layer and made of an n-type InGaP layer; a fourth collector layer formed on the third collector layer and made of an n-type InGaP layer having an impurity concentration higher than that of the third collector layer; a fifth collector layer formed on the fourth collector layer and made of an n-type GaAs layer; a base layer formed on the fifth collector layer and made of a p-type GaAs layer; and an emitter layer formed on the base layer and made of an n-type InGaP layer.

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