Image sensor and method for fabricating the same

Details Image sensor and method for fabricating the same Image sensor and method for fabricating the same

2006-10-31

2006-10-31

Kebede, Brook (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Charge transfer device

C257S447000, C257SE27132

Reexamination Certificate

active

07129532

ABSTRACT:
The present invention relates to an image sensor with a microlens and a method for fabricating the same with use of a bump formation process. A method for fabricating an image sensor includes the steps of: forming a passivation layer on a substrate structure provided with a photodiode and other various device elements; forming a microlens on a portion of the passivation layer; forming a microlens passivation layer for protecting the microlens from a subsequent bump formation process on the microlens; forming a pad open region by selectively etching the microlens passivation layer and the passivation layer; and forming a bump in the pad open region.

REFERENCES:
patent: 6307243 (2001-10-01), Rhodes
patent: 6632700 (2003-10-01), Fan et al.
patent: 2001/0010952 (2001-08-01), Abramovich
patent: 1020020014519 (2002-02-01), None

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