Ion implantation apparatus and method

Details Ion implantation apparatus and method Ion implantation apparatus and method

2006-10-10

2006-10-10

Wells, Nikita (Department: 2881)

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

C324S754120, C324S765010

Reexamination Certificate

active

07119347

ABSTRACT:
An ion implantation apparatus includes a laser beam irradiation unit which irradiates the surface of a target substrate with laser beam. The angle of an optical axis of the laser beam relative to the surface is adjustable. A reference line defining unit is adapted to define a virtual reference line which coincides with the optical axis of the laser beam when the angle takes a certain value. An ion irradiation unit provides an ion beam on a trajectory which coincides with the reference line.

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