Method to modulate etch rate in SLAM

Details Method to modulate etch rate in SLAM Method to modulate etch rate in SLAM

2006-09-05

2006-09-05

Nguyen, Thanh (Department: 2813)

Semiconductor device manufacturing: process

Chemical etching

C438S706000, C438S713000, C438S714000, C438S673000, C438S640000

Reexamination Certificate

active

07101798

ABSTRACT:
Several techniques are described for modulating the etch rate of a sacrificial light absorbing material (SLAM) by altering its composition so that it matches the etch rate of a surrounding dielectric. This is particularly useful in a dual damascene process where the SLAM fills a via opening and is etched along with a surrounding dielectric material to form trenches overlying the via opening.

REFERENCES:
patent: 6329118 (2001-12-01), Hussein et al.
patent: 6365529 (2002-04-01), Hussein et al.
patent: 6448185 (2002-09-01), Andideh et al.
patent: 2002/0175417 (2002-11-01), Morrow
patent: 2005/0029229 (2005-02-01), Chae et al.
patent: 0 249 173 (1987-06-01), None
patent: 1 150 343 (2001-04-01), None
patent: WO 01/15211 (2001-03-01), None
Kennedy, Organosiloxane Based Bottom Antireflective Coatings for 193nm Lithography, Advances in Resist Technology and Processing XX, Proceedings of SPIE vol. 5039 (2003), pp. 929-939.
Patent Corporation Treaty Search Report from the International Searching Authority, International Application No. PCT/US2004/037725, 14 pages.

Affiliated with

Also associated with

Rating

Method to modulate etch rate in SLAM does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method to modulate etch rate in SLAM, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method to modulate etch rate in SLAM will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3621084