Three-dimensional memory structure and manufacturing method...

Details Three-dimensional memory structure and manufacturing method... Three-dimensional memory structure and manufacturing method...

2006-04-18

2006-04-18

Kennedy, Jennifer (Department: 2812)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C438S131000, C438S600000

Reexamination Certificate

active

07030459

ABSTRACT:
A three-dimensional memory structure and manufacturing method thereof is provided. A first stack layer is formed over a substrate. The first stack layer includes, from the substrate upwards, an n-type polysilicon layer, a conductive layer, an anti-fuse and another n-type polysilicon layer. The first stack layer is patterned to form a first stack circuit. Thereafter, a second stack layer is formed over the first stack circuit. The second stack layer includes, from the first stack circuit upwards, a p-type polysilicon layer, a conductive layer, an anti-fuse and another p-type polysilicon. The second stack layer is patterned to form a second stack circuit that crosses over the first stack circuit perpendicularly. The aforementioned steps are repeated to form more stack circuits above the substrate and hence produce a three-dimensional structure.

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patent: 2003/0155569 (2003-08-01), Lee

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