Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2006-05-16
2006-05-16
Ho, Hoai (Department: 2818)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185030, C365S185290
Reexamination Certificate
active
07046559
ABSTRACT:
There is disclosed a semiconductor memory device including a memory cell array containing a plurality of banks each having one or more blocks, a data erase circuit configured to erase data from selected blocks in banks at a unit of block, and an automatic multi-block erase circuit configured to enable a data read circuit configured to read data from memory cells provided in one bank, when data erase operation for all erase-object blocks in the one bank is completed, while continuing a data erasing operation of a next erase-object block included in another bank.
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