Etching method using an at least semi-solid media

Details Etching method using an at least semi-solid media Etching method using an at least semi-solid media

2006-08-29

2006-08-29

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S735000, C438S977000, C257SE21214, C216S002000, C216S083000, C216S095000, C216S109000

Reexamination Certificate

active

07098143

ABSTRACT:
An etching method that uses an etch reactant retained within at least a semi-solid media (120, 220, 224, 230). The etch reactant media is applied to selectively etch a surface layer (106, 218, 222). The etch reactant media may be applied to remove metal shorts (222), smearing and eaves resulting from CMP or in failure analysis for uniform removal of a metal layer (218) without damaging the vias, contact, or underlying structures.

REFERENCES:
patent: 6375693 (2002-04-01), Cote et al.
patent: 6521574 (2003-02-01), Hirabayashi et al.
patent: 6951812 (2005-10-01), Jiang et al.
patent: 2004/0023413 (2004-02-01), Opalsky

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