Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Reexamination Certificate
2006-05-16
2006-05-16
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
C257S510000, C257S513000
Reexamination Certificate
active
07045875
ABSTRACT:
A plurality of trenches for defining active regions are formed in a semiconductor substrate, using a plurality of trench masks. A gap fill insulating layer is formed on the resulting structure to fill a gap region bounded by the trench and the trench masks. Next, the trench mask and the gap fill insulating layer are patterned to form a trench mask pattern and a gap fill insulating pattern for defining a slit-type opening, extending across and exposes the active region. A gate pattern is formed in the slit-type opening and the trench mask pattern is removed to form a contact opening exposing the active region. Next, a contact plug is formed to fill the contact opening. Here, the contact opening is self-alignedly formed using an etch selectivity between the trench mask and the gap fill insulating layer. The resulting contact opening is a vacancy in a rectangular parallelepiped shape.
REFERENCES:
patent: 6057581 (2000-05-01), Doan
patent: 6432816 (2002-08-01), Kim et al.
patent: 6617216 (2003-09-01), Hu
patent: 11-074526 (1999-03-01), None
English language abstract of Japanese Publication No. 11-074526.
Kim Ji-Young
Park Je-Min
Marger & Johnson & McCollom, P.C.
Nguyen Thinh T
Samsung Electronic Co. Ltd.
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