Method of making corrosion resistant, low resistivity copper for

Details Method of making corrosion resistant, low resistivity copper for Method of making corrosion resistant, low resistivity copper for

1992-12-31

1995-05-30

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437245, 437246, H01L 2144

Patent

active

054200695

ABSTRACT:
The fabrication and use of corrosion resistant Cu/Cu(x)Ge(y) alloy or Cu/Cu.sub.3 Ge phase bilayer interconnect metal lines is disclosed. A solid state, selective process of forming a Cu.sub.3 Ge phase or Cu(x)Ge(y) alloy by reacting GeH.sub.4 gas with Cu surface at low pressure in CVD reactor at temperatures of 200.degree.-450.degree. C. is described. Corrosion resistant semiconductor devices and packaging interconnects where corrosion of copper interconnects was a problem, is now made possible by the Cu/Cu.sub.3 Ge phase or Cu.sub.x Ge.sub.y alloy bilayer of the present invention. A structure where copper vias are completely or partially converted to Cu.sub.3 Ge or Cu.sub.x Ge.sub.y is presented. Also, dissimilar metals like Al--Cu can be connected by Cu.sub.3 Ge phase or Cu.sub.x Ge.sub.y alloy filled vias to improve electromigration performance.

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Isao, et al., "Effect of Substrate Texture on Thin Film Characteristics, 9, Vacuum heat treated Ge-Cu double layer films" Chem. Abstr. vol. 92, No. 20, 173008m (1992).
Berndt, et al. "Superconductivity and annealing behavior of quenched germanuim-noble metal alloy films" Chem. Abstr., vol. 75, No. 2, 12006t (1971).

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