Transistor device having a delafossite material

Details Transistor device having a delafossite material Transistor device having a delafossite material

2006-04-11

2006-04-11

Tran, Mai-Huong (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S066000, C257S069000, C257S072000, C257S079000, C257S103000, C257S347000, C438S082000, C438S099000

Reexamination Certificate

active

07026713

ABSTRACT:
A transistor device includes a channel of p-type substantially transparent delafossite material. Source and drain contacts are interfaced to the channel. Gate dielectric is between a gate contact and the channel.

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