Semiconductor device having rectifying action

Details Semiconductor device having rectifying action Semiconductor device having rectifying action

2006-09-05

2006-09-05

Nadav, Ori (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

With specified impurity concentration gradient

With high resistivity

C257S476000, C257S483000

Reexamination Certificate

active

07102207

ABSTRACT:
A semiconductor device including a base layer of a first conductivity type having a first main surface and a second main surface opposite the first main surface, a first main electrode layer connected to the first main surface, control regions arranged inside grooves penetrating the first main electrode layer and reach inside the base layer, and a second main electrode layer of the first conductivity type and connected to the second main surface.

REFERENCES:
patent: 5177572 (1993-01-01), Murakami
patent: 5693569 (1997-12-01), Ueno
patent: 5917216 (1999-06-01), Floyd et al.
patent: 6078090 (2000-06-01), Williams et al.
patent: 7-273354 (1995-10-01), None
patent: 10-163469 (1998-06-01), None
patent: 10-261791 (1998-09-01), None
patent: 11-26779 (1999-01-01), None
patent: 2000-323488 (2000-11-01), None
patent: 2001-36069 (2001-02-01), None

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