Method of making contract-free floating-gate memory array with s

Details Method of making contract-free floating-gate memory array with s Method of making contract-free floating-gate memory array with s

1993-09-13

1995-05-30

Thomas, Tom

Fishing, trapping, and vermin destroying

437 43, 437 48, 437200, H01L 2170

Patent

active

054200601

ABSTRACT:
A contact-free floating-gate non-volatile memory cell array and process with silicided NSAG bitlines and with source/drain regions buried beneath relatively thick silicon oxide. The bitlines have a relatively small resistance, eliminating the need for parallel metallic conductors with numerous bitline contacts. The array has relatively small bitline capacitance and may be constructed having relatively small dimensions. Isolation between bitlines is by thick field oxide. Wordlines may be formed from silicided polycrystalline or other material with low resistivity. Coupling of programming and erasing voltages to the floating gate is improved by extending the gates over the thick field oxide and perhaps by using an insulator with relatively high dielectric constant between the control gate and the floating gate. The sides of the floating gates are defined with a single patterning step. The resulting structure is a dense cross-point array of programmable memory cells.

REFERENCES:
patent: 4635347 (1987-01-01), Lien et al.
patent: 4720323 (1987-02-01), Sato
patent: 4804637 (1989-02-01), Smayling et al.
patent: 4830974 (1989-05-01), Chang et al.
patent: 4849369 (1989-07-01), Juech et al.
patent: 5110753 (1992-05-01), Gill et al.
patent: 5120571 (1992-06-01), Gill et al.

Affiliated with

Also associated with

Rating

Method of making contract-free floating-gate memory array with s does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of making contract-free floating-gate memory array with s, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of making contract-free floating-gate memory array with s will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-361357