Junction contact process and structure for semiconductor technol

Details Junction contact process and structure for semiconductor technol Junction contact process and structure for semiconductor technol

1994-01-14

1995-05-30

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437154, 437192, H01L 2138

Patent

active

054200563

ABSTRACT:
A device and method for forming an improved junction contact in a semiconductor device (10). A portion of an interlevel dielectric layer (28) is etched away to expose a surface of at least one junction region (26). Next, a dielectric layer is formed over the exposed surface of the junction regions (26). The semiconductor device (10) is then annealed in a nitrogen-containing ambient to diffuse a portion (34) of the at least one junction region (26) further into a substrate (12). The dielectric layer may then be removed and contact plugs (36) formed in the exposed area. Finally, a metal interconnect layer (38) may be formed to connect to the junction regions (26) through the contact plugs (36).

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