Fishing – trapping – and vermin destroying
Patent
1994-04-19
1995-05-30
Chaudhuri, Olik
Fishing, trapping, and vermin destroying
437126, 437133, 148DIG72, 257197, H01L 21265
Patent
active
054200520
ABSTRACT:
A method of fabricating a semiplanar heterojunction bipolar transistor (10) includes forming a subcollector layer (12) and a collector layer (16) onto a substrate layer (14). A collector implant plug (18) is selectively implanted to connect the subcollector layer (12) to the surface of the heterojunction bipolar transistor (10). A second epitaxial growth process causes a base layer (22), an emitter layer (24), and an emitter cap layer (26) to form on the collector layer (16) and the collector implant plug (18). By this process, the base layer (22) is not exposed to subsequent harmful fabrication steps. A base plug region (28) is selectively implanted to connect the base layer (22) to the surface of the heterojunction bipolar transistor (10). A base contact (32) and an emitter contact (30) are selectively formed within the heterojunction region on the base plug region (28) and the emitter cap layer (26), respectively. Lateral parasitic diodes between the base contact (32) and the emitter contact (30) are etched away to isolate the base contact (32) from the emitter contact (30). The emitter cap layer (26), the emitter layer (24), and the base layer (22) are removed from the vicinity of the collector implant plug (18) to allow formation of the collector contact (34).
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Morris Francis J.
Plumton Donald L.
Yang Jau-Yuann
Yuan Han-Tzong
Chaudhuri Olik
Donaldson Richard L.
Grossman Rene
Hoel Carlton H.
Pham Long
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