Pre-poly emitter implant

Details Pre-poly emitter implant Pre-poly emitter implant

1993-12-28

1995-05-30

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437186, 148DIG10, H01L 21265, H01L 2144

Patent

active

054200512

ABSTRACT:
A process of forming an emitter of a bipolar transistor is described. Dopants of a first conductivity type is implanted in the substrate to form the base. Dopants of a second conductivity type is then implanted into the base region to form a substrate emitter region. A polysilicon layer is then deposited over the substrate emitter and doped to form the doped polysilicon layer. An outdiffusion step follows to link the doped polysilicon layer to the substrate emitter.

REFERENCES:
patent: 3553830 (1971-01-01), Jenny et al.
patent: 4157269 (1979-06-01), Ning et al.
patent: 4531282 (1985-07-01), Sakai et al.
patent: 5116770 (1992-05-01), Kameyama et al.
patent: 5147809 (1992-09-01), Won et al.
S. Wolf, "Silicon Processing for the VLSI Era vol. 2--Process Integration, Chapter 7--Bipolar and Bicmos Process Integration," pp. 453-561, 1990.

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