Model optimization for structures with additional materials

Optics: measuring and testing – Shape or surface configuration

Reexamination Certificate

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C356S237500, C356S625000

Reexamination Certificate

active

07072049

ABSTRACT:
A wafer structure profile is modeled by determining one or more termination criteria. A determination is made as to whether a wafer structure includes at least one layer having three or more materials alone a line within the at least one layer. An optical metrology model for the wafer structure is created, where three or more materials are incorporated in the model for the at least one layer having three or more materials. A set of diffraction signals is simulated using the optical metrology model. The set of simulated diffraction signals and a set of diffraction signals measured off of the wafer structure are used to determine if the one or more termination criteria are met. The optical metrology model is modified until the one or more termination criteria are met.

REFERENCES:
patent: 6608690 (2003-08-01), Niu et al.
patent: 6768983 (2004-07-01), Jakatdar et al.
patent: 2002/0035455 (2002-03-01), Niu et al.
patent: 2002/0113966 (2002-08-01), Shchegrov et al.
patent: 2003/0058443 (2003-03-01), Xu et al.
patent: 2003/0187604 (2003-10-01), Drege et al.
patent: WO 03/068889 (2003-08-01), None
UK Search Report mailed on Jul. 21, 2004, for UK patent application No. GB 0402260.4 filed on Feb. 2, 2004, 2 pages.

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