Magnetoresistance effect element, magnetic head and magnetic...

Details Magnetoresistance effect element, magnetic head and magnetic... Magnetoresistance effect element, magnetic head and magnetic...

2006-07-04

2006-07-04

Ho, Tu-Tu (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Magnetic field

C257S295000, C257SE27006

Reexamination Certificate

active

07071522

ABSTRACT:
In a spin valve type element, an interface insertion layer (32, 34) of a material exhibiting large spin-dependent interface scattering is inserted in a location of a magnetically pinned layer (16) or a magnetically free layer (20) closer to a nonmagnetic intermediate layer (18). A nonmagnetic back layer (36) may be additionally inserted as an interface not in contact with the nonmagnetic intermediate layer to increase the output by making use of spin-dependent interface scattering along the interface between the pinned layer and the nonmagnetic back layer or between the free layer and the nonmagnetic back layer.

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patent: 6171693 (2001-01-01), Lubitz et al.
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patent: 6621666 (2003-09-01), Miyauchi et al.
patent: 6784509 (2004-08-01), Yuasa et al.
patent: 2002/0004147 (2002-01-01), Ueno et al.

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