Semiconductor device manufacturing: process – Having diamond semiconductor component
Reexamination Certificate
2006-07-11
2006-07-11
Huynh, Andy (Department: 2818)
Semiconductor device manufacturing: process
Having diamond semiconductor component
C438S150000, C438S305000, C438S306000, C438S519000, C438S931000
Reexamination Certificate
active
07074643
ABSTRACT:
Silicon carbide semiconductor devices and methods of fabricating silicon carbide semiconductor devices are provided by successively etching a mask layer to provide windows for formation of a source region or a first conductivity type, a buried silicon carbide region of a second conductivity type opposite to the first conductivity type and a second conductivity type well region in a first conductivity type silicon carbide layer. The source region and the buried silicon carbide region are formed utilizing a first window of the mask layer. Then, the well region is formed utilizing a second window of the mask layer, the second window being provided by a subsequent etch of the mask layer having the first window.
REFERENCES:
patent: 3629011 (1971-12-01), Tohi et al.
patent: 3924024 (1975-12-01), Naber et al.
patent: 4466172 (1984-08-01), Batra
patent: 4811065 (1989-03-01), Cogan
patent: 4875083 (1989-10-01), Palmour
patent: 5111253 (1992-05-01), Korman et al.
patent: 5170231 (1992-12-01), Fujii et al.
patent: 5170455 (1992-12-01), Goossen et al.
patent: 5184199 (1993-02-01), Fujii et al.
patent: 5270554 (1993-12-01), Palmour
patent: 5348895 (1994-09-01), Smayling et al.
patent: 5384270 (1995-01-01), Ueno
patent: 5385855 (1995-01-01), Brown et al.
patent: 5393999 (1995-02-01), Malhi
patent: 5396085 (1995-03-01), Baliga
patent: 5479316 (1995-12-01), Smrtic et al.
patent: 5506421 (1996-04-01), Palmour
patent: 5510281 (1996-04-01), Ghezzo et al.
patent: 5510630 (1996-04-01), Agarwal
patent: 5587870 (1996-12-01), Anderson et al.
patent: 5629531 (1997-05-01), Palmour
patent: 5710059 (1998-01-01), Rottner
patent: 5726463 (1998-03-01), Brown et al.
patent: 5734180 (1998-03-01), Malhi
patent: 5739564 (1998-04-01), Kosa et al.
patent: 5763905 (1998-06-01), Harris
patent: 5804483 (1998-09-01), Harris
patent: 5814859 (1998-09-01), Ghezzo et al.
patent: 5837572 (1998-11-01), Gardner et al.
patent: 5851908 (1998-12-01), Harris et al.
patent: 5877041 (1999-03-01), Fuller
patent: 5877045 (1999-03-01), Kapoor
patent: 5885870 (1999-03-01), Maiti et al.
patent: 5917203 (1999-06-01), Bhatnagar et al.
patent: 5939763 (1999-08-01), Hao et al.
patent: 5960289 (1999-09-01), Tsui et al.
patent: 5972801 (1999-10-01), Lipkin et al.
patent: 5976936 (1999-11-01), Miyajima et al.
patent: 6020600 (2000-02-01), Miyajima et al.
patent: 6025233 (2000-02-01), Terasawa
patent: 6025608 (2000-02-01), Harris et al.
patent: 6028012 (2000-02-01), Wang
patent: 6048766 (2000-04-01), Gardner et al.
patent: 6054352 (2000-04-01), Ueno
patent: 6063698 (2000-05-01), Tseng et al.
patent: 6096607 (2000-08-01), Ueno
patent: 6100169 (2000-08-01), Suvorov et al.
patent: 6107142 (2000-08-01), Suvorov et al.
patent: 6117735 (2000-09-01), Ueno
patent: 6133587 (2000-10-01), Takeuchi et al.
patent: 6136728 (2000-10-01), Wang
patent: 6165822 (2000-12-01), Okuno et al.
patent: 6180958 (2001-01-01), Cooper, Jr.
patent: 6190973 (2001-02-01), Berg et al.
patent: 6204135 (2001-03-01), Peters et al.
patent: 6204203 (2001-03-01), Narwankar et al.
patent: 6211035 (2001-04-01), Moise et al.
patent: 6221700 (2001-04-01), Okuno et al.
patent: 6228720 (2001-05-01), Kitabatake et al.
patent: 6238967 (2001-05-01), Shiho et al.
patent: 6239463 (2001-05-01), Williams et al.
patent: 6246076 (2001-06-01), Lipkin et al.
patent: 6297100 (2001-10-01), Kumar et al.
patent: 6297172 (2001-10-01), Kashiwagi
patent: 6303508 (2001-10-01), Alok
patent: 6316791 (2001-11-01), Schorner et al.
patent: 6344663 (2002-02-01), Slater, Jr. et al.
patent: 6399996 (2002-06-01), Chang et al.
patent: 6420225 (2002-07-01), Chang et al.
patent: 6429041 (2002-08-01), Ryu et al.
patent: 6448160 (2002-09-01), Chang et al.
patent: 6455892 (2002-09-01), Okuno et al.
patent: 6551865 (2003-04-01), Kumar et al.
patent: 6573534 (2003-06-01), Kumar et al.
patent: 6593620 (2003-07-01), Hshieh et al.
patent: 6610366 (2003-08-01), Lipkin
patent: 6653659 (2003-11-01), Ryu et al.
patent: 2001/0055852 (2001-12-01), Moise et al.
patent: 2002/0030191 (2002-03-01), Das et al.
patent: 2002/0038891 (2002-04-01), Ryu et al.
patent: 2002/0047125 (2002-04-01), Fukuda et al.
patent: 2002/0072247 (2002-06-01), Lipkin et al.
patent: 2002/0102358 (2002-08-01), Das et al.
patent: 2004/0212011 (2004-10-01), Ryu
patent: 198 09 554 (1998-09-01), None
patent: 198 32 329 (1999-02-01), None
patent: 19900171 (2000-12-01), None
patent: 10036208 (2002-02-01), None
patent: 0637069 (1995-02-01), None
patent: 0637069 (1995-02-01), None
patent: 1 058 317 (2000-12-01), None
patent: 01117363 (1989-05-01), None
patent: 03034466 (1991-02-01), None
patent: 03157974 (1991-07-01), None
patent: 08264766 (1996-10-01), None
patent: 09205202 (1997-08-01), None
patent: 11191559 (1999-07-01), None
patent: 11238742 (1999-08-01), None
patent: 11261061 (1999-09-01), None
patent: 11266017 (1999-09-01), None
patent: 11274487 (1999-10-01), None
patent: 2000049167 (2000-02-01), None
patent: 2000082812 (2000-03-01), None
patent: 02000025246 (2000-09-01), None
patent: 20000106371 (2001-04-01), None
patent: WO 97/98754 (1997-03-01), None
patent: WO 97/17730 (1997-05-01), None
patent: WO 97/39485 (1997-10-01), None
patent: WO 98/02916 (1998-01-01), None
patent: WO 98/02924 (1998-01-01), None
patent: WO99/63591 (1999-12-01), None
patent: WO 00/13236 (2000-03-01), None
patent: WO 01/78134 (2001-10-01), None
Palmour et al. “SiC Device Technology: Remaining Issues,” Diamond and Related Materials. vol. 6, 1997, pp. 1400-1404.
Rao et al. “P-N Junction Formation in 6H-SiC by Acceptor Implantation into N-Type Substrate,” Nuclear Instruments and Methods in Physics Research B. vol. 106, 1995, pp. 333-338.
Rao et al. “Al and N Ion Implantations in 6H-SiC,” Silicon Carbide and Related Materials. 1995 Conf, Kyoto, Japan. Published 1996.
Capano, M.A., et al., Ionization Energies and Electron Mobilities in Phosphorus--and Nitrogen-Implanted 4H-Silicon Carbide, IEEE ICSCRM Conference 1999, Research Triangle Park, North Carolina (Oct. 10-13, 1999).
Patel, R., et al., Phosphorus-Implanted High-Voltage N.sup.+ P 4H-SiC Junction Rectifiers, Proceedings of 1998 International Symposium on Poer Semiconductor Devices & ICs, pp. 387-390 (Kyoto).
Dastidar, Sujoyita, A Study of P-Type Activation in Silicon Carbide, Thesis (Purdue University, May 1998).
Bhatnagar et al. “Comparison of 6H-SiC, 3C-SiC, and Si for Power Devices,”IEEE Transactions on Electron Devices, vol. 40, No. 3, Mar. 1993, pp. 645-655.
Baliga, Power Semiconductor Devices, Chapter 7, PWS Publishing, 1996.
U.S. Appl. No. 60/435,212.
U.S. Appl. No. 60/294,307.
U.S. Appl. No. 10/422,130.
Mutin, P. Herbert, “Control of the Composition and Structure of Silicon Oxycarbide and Oxynitride Glasses Derived from Polysiloxane Precursors,”Journal of Sol-Gel Science and Technology. vol. 14 (1999) pp. 27-38.
del Prado et al. “Full Composition Range Silicon Oxynitride Films Deposited by ECR-PECVD at Room Temperatures,”Thin Solid Films. vol. 343-344 (1999) p. 437-440.
Kobayashi et al. “Dielectric Breakdown and Current Conduction of Oxide/Nitride/Oxide Multi-Layer Structures,”1990 IEEE Symposium on VLSI Technology. pp. 119-120.
Ma et al. “Fixed and trapped charges at oxide-nitride-oxide heterostructure interfaces formed by remote plasma enhanced chemical vapor deposition,”J. Vac. Sci. Technol. B.vol. 11, No. 4, Jul./Aug. 1993, pp. 1533-1540.
Dimitrijev et al., “Nitridation of Silicon-Dioxide Films Grown on 6H Silicon Carbide”,IEEE Electronic Device Letters, vol. 18, No. 5, May 05, 1997, pp. 175-177.
De Meo et al., “Thermal Oxidation of SiC in N2O”,J. Electrochem. Soc., vol. 141, 1994, pp. L150-L152.
Dahlquist et al. “A 2.8kV, Forward Drop JBS Diode with Low Leakage,”Materials Science Forum, vol. 338-342, (2000) pp. 1179-1182.
Mondal et al. “An Integrated 500-V Power DSMOSFET/Antiparallel Rectifier Device with Improved Diode Reverse Recovery Characteristics,”IEEE Electron Device Letters, vol. 23, No. 9, Sep. 2002, pp. 562-564.
Motorola Power MOSFET Transis
Cree Inc.
Huynh Andy
Myers Bigel & Sibley & Sajovec
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