Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Non-single crystal – or recrystallized – material containing...
Reexamination Certificate
2006-03-21
2006-03-21
Huynh, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Non-single crystal, or recrystallized, material containing...
C257S052000, C257S055000, C257S059000, C257S063000, C257S064000, C257S066000
Reexamination Certificate
active
07015507
ABSTRACT:
Provided is a non-single-crystal germanium thin film transistor having a gate insulating film capable of reducing the interface state density between an active layer and the gate insulating film. This thin film transistor has an active layer made of a non-single-crystal germanium film, and a gate oxide film substantially made of zirconium oxide or hafnium oxide.
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Shimada Tetsuya
Yonehara Takao
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