Process for manufacturing thyristor with adjustable breakover vo

Details Process for manufacturing thyristor with adjustable breakover vo Process for manufacturing thyristor with adjustable breakover vo

1993-09-27

1995-05-30

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437931, 257173, H01L 2974

Patent

active

054200458

ABSTRACT:
Thyristor with an npnp layer sequence, in which a zone (14) enriched with generation and recombination centers and formed by proton irradiation is provided underneath the triggering contact (7) in the n-type base (3), which enriched zone defines, by means of its distance (d) from the cathode-end main surface (15), a reduced breakover voltage at which a controllable overhead triggering of the thyristor occurs.

REFERENCES:
patent: 4278475 (1981-07-01), Bartko et al.
patent: 4497109 (1985-02-01), Huber et al.
patent: 4987087 (1991-01-01), Voss
patent: 5049965 (1991-09-01), Schulze et al.
patent: 5243205 (1993-09-01), Kitagawa
"Laser Trimming of Thyristors to Add an Overvoltage Self-Protectived Turn-On Feature"; 16th Annual IEEE Power Electronics Specialists Conference, Jun. 24-28, 1985, pp. 463-468.

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