Nonvolatile semiconductor memory having a control gate...

Static information storage and retrieval – Floating gate – Particular biasing

Reexamination Certificate

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C365S185120, C365S185290

Reexamination Certificate

active

07031195

ABSTRACT:
A nonvolatile semiconductor memory includes: a memory sub array including a memory cell unit configured with a memory cell transistor and a select transistor connected in series; a control gate line driver including a control gate line driver transistor connected to a control gate line of the memory cell transistor; and a select transistor gate line driver including a select gate line driver transistor connected to a select gate line of the select transistor. A thickness of a gate insulator of the control gate line driver transistor is thicker than that of the select gate line driver transistor.

REFERENCES:
patent: 6316317 (2001-11-01), Kawata et al.
patent: 6813216 (2004-11-01), Lee
patent: 6934192 (2005-08-01), Tailliet et al.
patent: 6937515 (2005-08-01), Sudo et al.
patent: 4-165670 (1992-06-01), None
patent: 2000-269361 (2000-09-01), None

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