Semiconductor device, semiconductor circuit module and...

Details Semiconductor device, semiconductor circuit module and... Semiconductor device, semiconductor circuit module and...

2006-08-22

2006-08-22

Ho, Tu-Tu (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S067000, C257S069000, C257S347000, C257SE29193

Reexamination Certificate

active

07095043

ABSTRACT:
An (SiGe)C layer having a stoichiometric ratio of about 1:1 is locally formed on an Si layer, a large forbidden band width semiconductor device is prepared inside the layered structure thereof and an Si semiconductor integrated circuit is formed in the regions not formed with the layered structure, whereby high frequency high power operation of the device is enabled by the large forbidden band width semiconductor device and high performance is attained by hybridization of the Si integrated circuit.

REFERENCES:
patent: 2001/0045604 (2001-11-01), Oda et al.
patent: 2002/0146892 (2002-10-01), Notsu et al.
patent: 9-283533 (1997-10-01), None
patent: 2798576 (1998-07-01), None
J. Kouvetakis, et al., “Novel Chemical Routes to Silicon-Germanium-Carbon Materials”, Appl. Phys. Lett., vol. 65,No. 23, Dec. 5, 1994, pp. 2960-2962.

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