Chemical-mechanical polishing (CMP) process for shallow...

Details Chemical-mechanical polishing (CMP) process for shallow... Chemical-mechanical polishing (CMP) process for shallow...

2006-08-08

2006-08-08

Chen, Kin-Chan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S693000

Reexamination Certificate

active

07087528

ABSTRACT:
A method of forming shallow trench isolation includes etching trenches through a nitride layer, a polysilicon layer, and a pad oxide layer and into a semiconductor substrate. The trenches are filled with an oxide layer. A silicon oxynitride layer is deposited overlying the oxide layer and both these layers are polished away using a first slurry having high selectivity. A second polishing polishes away the oxide layer using a second slurry having a low selectivity. The nitride layer is removed and a third polishing is performed to planarize the oxide layer using a third slurry having high selectivity. Alternatively, the oxide layer is etched away except where it overlies the trenches. A first polishing is performed to polish away the oxide layer using a first slurry having a low selectivity. A second polishing is performed to polish away the oxide layer using a second slurry having high selectivity.

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